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半金屬銻化鎵/砷化銦系統中傳輸及光學性質研究

时间:2011年03月10日来源:职称论文网 作者:admin 点击:
  【关键词】傳輸,光學,性質,研究,統中,銦系,屬銻,化鎵,砷化,半金,

論文名稱(英文) Transport and optical properties of semi-metallic GaSb/InAs system
校院名稱 臺灣大學
系所名稱(中) 物理研究所
系所名稱(英) Graduate Institute of Physics
學年度 93
學期 2
出版年 94
研究生(中文) 黃郁茵
研究生(英文) Yu-Yin Huang
學號 R91222028
學位類別 碩士
語文別 英文
口試日期 2005-06-29
論文頁數 70頁
口試委員 指導教授-張顏暉
委員-陳永芳
委員-梁啟德

中文關鍵字 砷化銦 半金屬 銻化鎵 量子井 電子濃度 螢光光譜 霍爾效應
英文關鍵字 InAs GaSb quantum well van der Pauw Hall measurement photoluminescence transport electron concentration mobility type-II exciton binding energy semi-metallic
學科別分類 學科別>自然科學>物理

英文摘要 Semi-metallic GaSb/InAs system has attracted much attention due to its unique band alignment. In this thesis, we report the Hall effect and photoluminescence studies of such a system.
In the Hall effect measurement, it was found that the electron concentration in the InAs decreases with decreasing temperature. Three activation energies (Ea1, Ea2 and Ea3) were obtained. Ea2 obtained from the cross over region (about 30 K to 50 K) is smaller than 1 meV, and it is tentatively attributed to the binding energy of the spatially exciton in this system. We found that our transport results at low temperature are consistent with the Bose-Einstein Condensation (BEC) behavior which theoretical prediction proposed by J. F. Jan and Y. C. Lee. Using self-consistent variational approach to model the structure, we are able to estimate the electron n (in the InAs layer) and hole p (in the GaSb layer) densities.
In the photoluminescence (PL) measurement, temperature and power dependence of photoluminescence emission were performed and two main peaks (798meV and 773meV) corresponding to the transitions in GaSb layer were observed. From the Arrhenius plots of the integrated intensities, activation energies were obtained. We suggest that the 798 meV transition is a band-acceptor transition instead of a bound excition- neutral acceptor (BE) transition which other authors have proposed in bulk GaSb. We’ve also observed the integrated PL intensity of 773meV peak (e-Å) tends to saturate with raising laser power.

論文目次 Contents

Chapter 1.
Introduction 1

Chapter 2.
Theoretical Background 5

2-1 Hall effect ………...…………………………………………5
2-2 The van der Pauw Technique……………………………… …8
2-3 Bose-Einstein Condensation ………………………… ……11
2-4 Self-consistent calculations in InAs-GaSb heterojunctions ……………………………………………………14
2-5 Shubnikov-de Haas effect ………………………………… 17
2-6 Photoluminescence ……………………………………………20

Chapter 3.
Transport study of semi-metallic GaSb/ InAs quantum well 30

3-1 Sample preparation ………………………………………… 30
3-2 Experimental procedure …………………………………… 32
3-3 Results and discussion …………………………………… 35

Chapter 4.
Optical study 52

4-1 Introduction ………………………………………………… 52
4-2 Experiment …………………………………………………… 54
4-3 Results and discussion …………………………………… 56

Chapter 5.
Conclusions 69

參考文獻 chapter1
1. Manasreh M O (ed) 1993 Semiconductor Quantum Well and Supperlattices for Long-Wavelength Infrared Detectors (Boston: Artech House ).
2. Manasreh M O (ed) 1997 Optoelectronic Properties of Semiconductor and Supperlattices volume III: Antimonide-Related Strained-Layer Heterostructures (Australia: Gordon and Breach Science Publishers).
3. H. Mohseni, A. Tahraoui, J. Wojkowski, M. Razeghi, Appl. Phys. Lett. 77 (11), 1572 (2000).


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