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砷化銦/銻化鋁鎵量子井之光學及傳輸特性研究

时间:2011年03月10日来源:职称论文网 作者:admin 点击:
  【关键词】學,傳輸,特性,研究,之光,量子井,銦,銻化,鋁鎵,砷化,

論文名稱(英文) Optical and Transport Properties of InAs/AlxGa1-xSb Quantum Well System
校院名稱 臺灣大學
系所名稱(中) 物理研究所
系所名稱(英) Graduate Institute of Physics
學年度 93
學期 2
出版年 94
研究生(中文) 石明峰
研究生(英文) Ming Fong Shih
學號 R92222030
學位類別 碩士
語文別 英文
口試日期 2005-06-29
論文頁數 66頁
口試委員 指導教授-張顏暉
委員-陳永芳
委員-梁啟德

中文關鍵字 砷化銦 銻化鋁鎵 量子井 電子濃度 雜質 螢光光譜 穿透光譜 霍爾效應
英文關鍵字 InAs AlxGa1-xSb quantum well van der Pauw Hall measurement photoluminescence exciton binding energy Fourier transform infrared measurement transmission transport electron concentration mobility etched Be dopant type-II
學科別分類 學科別>自然科學>物理

英文摘要 In this thesis, we report the studies on optical and electrical properties of type-II InAs/AlxGa1-xSb multiple quantum wells. The electron concentration and resistivity were studied by van der Pauw/Hall measurement. The optical transitions were investigated by photoluminescence (PL) measurement. Transmission spectra studied by Fourier transform infrared measurement (FTIR) were also reported.
The band structure of samples changed substantially after removing the cap layer, and the properties of the as-grown sample with that of the etched sample was compared.
Base on the temperature dependence of the electron concentration in InAs quantum well, we find the activation energy for electron ionization. The main peak of PL spectrum in the infrared range is due to the subband transition between the InAs well and AlxGa1-xSb barrier in the cap layers. The two small absorption peaks in transmission spectra can be attributed to GaSb and InAs TO phonons. The infrared absorption by InAs TO phonon provides a nondestructive way to determine the layer thickness of the InAs quantum well.

論文目次 Contents


Chapter 1. Introduction……………………………………………………………1

1.1 Previous Work…………………………………………………………………1
1.2 Overview………………………………………………………………………2


Chapter 2. Theoretical Background…………….…………………………………4

2.1 van der Pauw Method………………………………………………………….4
2.2 Hall Effect……………………………………………………………..………..6
2.3 Electron Accumulation in InAs/AlxGa1-xSb Quantum Well………….…………8
2.3.1 Surface Donor and Surface Pinning Level……………………………..…8
2.3.2 Deep Donor in Undoped AlxGa1-xSb Barrier……………………….……..8
2.3.3 Interface Donor………………………………………………………..…..9
2.4 Photoluminescence (PL)……………………………………………………...…9
2.5 Michelson Interferometer and Fourier Transform……………………..……..12
2.5.1 Michelson Interferometer………………………………………..……..12
2.5.2 Fourier Transform…………………………………………………...….12
2.6 Sample Structure………………………………………………………………15
2.6.1 Energy Band Offset……………………………………………………...15


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